fep30ap thru fep30jp vishay general semiconductor document number: 88597 revision: 29-aug-07 for technical questions within your r egion, please contact one of the following: pdd-americas@vishay.com , pdd-asia@vishay.com , pdd-europe@vishay.com www.vishay.com 1 dual common cathode ultrafast rectifier features ? glass passivated chip junction ? ultrafast recovery time ? low switching losses, high efficiency ? low thermal resistance ? high forward surge capability ? solder dip 260 c, 40 s ? component in accordance to rohs 2002/95/ec and weee 2002/96/ec typical applications for use in high frequency rectifier of switching mode power supplies, inverters, freewheeling diodes, dc-to-dc converters, and other power switching application. mechanical data case: to-247ad (to-3p) epoxy meets ul 94v-0 flammability rating terminals: matte tin plated leads, solderable per j-std-002 and jesd22-b102 e3 suffix for consumer grade, meets jesd 201 class 1a whisker test polarity: as marked mounting torque: 10 in-lbs maximum primary characteristics i f(av) 30 a v rrm 50 v to 600 v i fsm 300 a t rr 35 ns, 50 ns v f 0.95 v, 1.3 v, 1.5 v t j max. 150 c pin 1 pin 3 case pin 2 to-247ad (to-3p) 1 2 3 maximum ratings (t a = 25 c unless otherwise noted) parameter symbol fep 30ap fep 30bp fep 30cp fep 30dp fep 30fp fep 30gp fep 30hp fep 30jp unit maximum repetitive peak reverse voltage v rrm 50 100 150 200 300 400 500 600 v maximum rms voltage v rms 35 70 105 140 210 280 350 420 v maximum dc blocking voltage v dc 50 100 150 200 300 400 500 600 v maximum average forward rectified current at t c = 100 c i f(av) 30 a peak forward surge current 8.3 ms single half sine-wave superimposed on rated load per diode i fsm 300 a operating storage and temperature range t j , t stg - 55 to + 150 c/w
fep30ap thru fep30jp vishay general semiconductor www.vishay.com for technical questions within your region, please contact one of the following: pdd-americas@vishay.com , pdd-asia@vishay.com , pdd-europe@vishay.com document number: 88597 revision: 29-aug-07 2 note: (1) thermal resistance from junction to case per diode mounted on heatsink ratings and characteristics curves (t a = 25 c unless otherwise noted) electrical characteristics (t a = 25 c unless otherwise noted) parameter test conditions symbol fep 30ap fep 30bp fep 30cp fep 30dp fep 30fp fep 30gp fep 30hp fep 30jp unit maximum instantaneous forward voltage per diode 15.0 a v f 0.95 1.3 1.5 v maximum dc reverse current at rated dc blocking voltage per diode t c = 25 c t c = 100 c i r 10 500 a maximum reverse recovery time per diode i f = 0.5 a, i r = 1.0 a, i rr = 0.25 a t rr 35 50 ns typical junction capacitance per diode 4.0 v, 1 mhz c j 175 145 pf thermal characteristics (t a = 25 c unless otherwise noted) parameter symbol fep 30ap fep 30bp fep 30cp fep 30dp fep 30fp fep 30gp fep 30hp fep 30jp unit typical thermal resistance per diode (1) r jc 1.0 c/w ordering information (example) package preferred p/n unit weight (g) package code base quantity delivery mode to-247ad fep30jp-e3/45 6.15 30 30/tube tube figure 1. forward current derating curve 0 50 100 150 0 6 12 24 30 36 a v erage for w ard c u rrent (a) case temperat u re (c) resisti v e or ind u cti v e load figure 2. maximum non-repetitive peak forward surge current per diode 1 10 100 0 50 100 150 200 250 300 nu m b er of cycles at 60 hz peak for w ard s u rge c u rrent (a) t c = 100 c 8 .3 ms single half sine- w a v e
fep30ap thru fep30jp vishay general semiconductor document number: 88597 revision: 29-aug-07 for technical questions within your r egion, please contact one of the following: pdd-americas@vishay.com , pdd-asia@vishay.com , pdd-europe@vishay.com www.vishay.com 3 package outline dimensions in inches (millimeters) figure 3. typical instantaneous forw ard characteristics per diode figure 4. typical reverse characteristics per diode 0.2 0.6 0.4 0. 8 1.0 1.2 1.4 1.6 0.1 1 10 100 instantaneo u s for w ard v oltage ( v ) instantaneo u s for w ard c u rrent (a) 50 - 200 v 300 - 400 v 500 - 600 v t j = 125 c t j = 25 c p u lse w idth = 300 s 1 % d u ty cycle 0 20 40 60 8 0 100 0.1 0.01 1 10 100 50 - 200 v 300 - 600 v t j = 100 c t j = 25 c t j = 25 c percent of rated peak re v erse v oltage (%) instantaneo u s re v erse leakage c u rrent ( a) figure 5. typical juncti on capacitance per diode 0.1 1 10 100 10 100 1000 re v erse v oltage ( v ) j u nction capacitance (pf) 50 - 400 v 500 - 600 v t j = 25 c f = 1.0 mhz v sig = 50 m v p-p pi n 1 pi n 3 case pi n 2 to-247ad (to-3p) 0.245 (6.2) 0.225 (5.7) 0.645 (16.4) 0.625 (15.9) 0.323 ( 8 .2) 0.313 (7.9) 0.142 (3.6) 0.13 8 (3.5) 0.170 (4.3) 0.0 8 6(2.1 8 ) 0.076 (1.93) 0.160 (4.1) 0.140 (3.5) 0.225 (5.7) 0.205 (5.2) 0.127 (3.22) 0.117 (2.97) 0.04 8 (1.22) 0.044 (1.12) 0.795 (20.2) 0.775 (19.6) 0. 8 40 (21.3) 0. 8 20 (20. 8 ) 1 2 3 0.07 8 (1.9 8 ) ref. 0.203 (5.16) 0.193 (4.90) 10 typ. both sides 30 10 1 ref. both sides 0.030 (0.76) 0.020 (0.51) 0.11 8 (3.0) 0.10 8 (2.7)
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